Measurement of the conductance distribution function at a quantum Hall transition.
نویسندگان
چکیده
We study the reproducible conductance fluctuations seen between the quantum Hall plateaus in the conductance of two-terminal submicron silicon MOSFETs. For the dramatic fluctuations at the insulator-to-first-plateau transition we find a conductance distribution that is flat between zero and e/h. We point out that this is consistent with the prediction of random matrix theory for a conductor with single-channel leads in a magnetic field. PACS numbers: 73.23.-b, 73.23.Ad, 73.40.Hm Typeset using REVTEX
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عنوان ژورنال:
- Physical review. B, Condensed matter
دوره 54 24 شماره
صفحات -
تاریخ انتشار 1996